@inproceedings{72e0f7d4291a47aaac19c2901461b8cf,
title = "Radiation response analyzer of semiconductor dies",
abstract = "A novel technique of the on-site and real-time gamma ray radiation response analysis for semiconductor dies is proposed in the paper. Fundamental analysis of the die's radiation effects were demonstrated using the pulse current-voltage, the pulse capacitance-voltage and the pulse On-The-Fly measurements based on a probe station testing system which contains a lead container and a 10GBq 137Cs source. Radiation response of high-k/SiO2 stacks based gate oxides was investigated on site and in real time using the proposed analyzer.",
keywords = "high-k dielectrics, radiation effects",
author = "Mu Yifei and Cezhou Zhao and Shengmao Su and Zhao Yue and Ivona Mitrovic and Stephen Taylor and Paul Chalker",
year = "2013",
doi = "10.1109/IPFA.2013.6599252",
language = "English",
isbn = "9781479912414",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
pages = "682--685",
booktitle = "Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013",
note = "2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 ; Conference date: 15-07-2013 Through 19-07-2013",
}