@inproceedings{4538c930d55440189aa1df4a68ab2d44,
title = "Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide",
abstract = "The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.",
author = "M. Werner and Zhao, {C. Z.} and S. Taylor and Chalker, {P. R.} and K. Black and J. Gaskell.",
year = "2009",
doi = "10.1109/IPFA.2009.5232568",
language = "English",
isbn = "9781424439102",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
pages = "625--627",
booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",
note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",
}