Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

M. Werner*, C. Z. Zhao, S. Taylor, P. R. Chalker, K. Black, J. Gaskell.

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

5 Citations (Scopus)

Abstract

The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with hlgher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.

Original languageEnglish
Title of host publicationProceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages625-627
Number of pages3
DOIs
Publication statusPublished - 2009
Event2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China
Duration: 6 Jul 200910 Jul 2009

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/TerritoryChina
CitySuzhou
Period6/07/0910/07/09

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