Orientationally ordered island growth of higher fullerenes on Ag/Si(111)-(√3 ×√3)R30°

M. J. Butcher*, J. W. Nolan, M. R.C. Hunt, P. H. Beton, L. Dunsch, P. Kuran, P. Georgi, T. J.S. Dennis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


The adsorption of the higher endohedral and empty fullerenes La@C82 and C84 on Ag/Si(111)-(√3 × √3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.

Original languageEnglish
Article number195401
Pages (from-to)1954011-1954016
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
Publication statusPublished - 15 Nov 2001
Externally publishedYes


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