Monolithically Integrated PWM Circuit Based on AlGaN/GaN MIS-HMETs for All-GaN Smart Power System

Yi Shen, Ziqian Li, Ang Li, Wen Liu

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

This work investigates a monolithic integrated pulse width modulation (PWM) circuit based on aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs). The PWM circuit contains comparator, hysteresis comparator, and sawtooth generator, which all show stable performances. The PWM circuit is able to generate a 500 kHz high-frequency PWM signal with a 5.5 V swing and an adjustable duty cycle from 30% to 70%. These results exhibit a feasible example to achieve the all-GaN monolithic integration of signal and control blocks in smart power ICs by using GaN MIS-HMETs.

Original languageEnglish
JournalProceedings of International Conference on ASIC
DOIs
Publication statusPublished - 2021
Event14th IEEE International Conference on ASIC, ASICON 2021 - Kunming, China
Duration: 26 Oct 202129 Oct 2021

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