Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters

Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung C. Liang, Cezhou Zhao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and a half-bridge power stage in a 3- $\mu \text{m}$ enhancement-mode (E-mode) GaN-on-Si process. The fabricated synchronous converter with integrated gate drivers is based on E-mode GaN MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), which have a large gate swing of 10 V due to the insertion of 20 nm high-k gate insulator Al2O3. At 100 kHz, the proposed DC-DC integrated circuits (ICs) exhibit good thermal stability at high temperatures up to 250 °C for 25 V down conversion. Furthermore, four different designs (asynchronous and synchronous) including converters with external drivers were systematically evaluated at different input voltages and duty cycles, the GaN-based DC-DC converters with integrated gate drivers exhibit small voltage overshoots and oscillations due to reduced parasitic inductance and chip size. These results validate the advantages of monolithic, lateral integration of half-bridge GaN ICs with gate drivers for high temperature power converters.

Original languageEnglish
Article number8928556
Pages (from-to)184375-184384
Number of pages10
JournalIEEE Access
Publication statusPublished - 2019


  • GaN integration circuits (ICs)
  • high temperature operations
  • integrated gate drivers
  • synchronous and asynchronous dc-dc buck converters

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