Low-Resistance Ni/Ag Contacts on GaN-Based p-Channel Heterojunction Field-Effect Transistor

Yuanlei Zhang, Zhiwei Sun, Weisheng Wang, Ye Liang, Miao Cui, Yinchao Zhao, Huiqing Wen, Wen Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this work, we have demonstrated the Ni/Ag contacts on p-channel heterostructure field-effect transistors (p-HFETs) based on the p-GaN/AlGaN/GaN/Si platform. Using an optimal contact condition, where Ni/Ag (1/120 nm) was deposited and annealed at 550 °C for 180 s in O2 ambient, a low contact resistance (27.44 Ω mm at 50 mA/mm) and a low Schottky barrier height (SBH) (0.479 eV) have been obtained. The p-HFETs with Ni/Ag contacts exhibit a very slight Schottky character, resulting in a satisfactory ON-resistance (RON) of 2.1 kΩ mm. Furthermore, the p-HFETs exhibit excellent electrical properties including a threshold voltage (Vth) of -1.91 V, an ON-state current (ION) of 2.46 mA/mm, and an ION/IOFF ratio of ∼ 106. These results present a great potential of cost-effective Ni/Ag contacts on p-HFETs.

Original languageEnglish
Pages (from-to)31-35
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 1 Jan 2023


  • Ohmic contacts
  • p-channel heterostructure field-effect transistor (p-HFET)
  • p-gallium nitride (GaN)
  • Schottky barrier height (SBH)


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