Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs with Partially Recessed Gate and ZrO Charge Trapping Layer

Yutao Cai, Yuanlei Zhang, Ye Liang, Ivona Z. Mitrovic, Huiqing Wen, Wen Liu, Cezhou Zhao

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrOx charge trapping layer are proposed. The deposition of the ZrOx charge trapping layer on the partially recessed AlGaN in conjunction with the Al2O3 gate dielectric has been accomplished. The developed MIS-HEMTs exhibit a threshold voltage of 1.55 ± 0.4 V and a maximum drain current of 730 ± 6 mA/mm, while associated low ON-resistance of 7.1 ± 0.2 Ω mm, for a gate to drain separation of 3 μm. The TCAD simulation results are presented to explore the charge trapping and de-trapping behaviors. Moreover, the devices exhibit a high breakdown voltage. The results indicate the merits of employing ZrOx charge trapping layer to realize the normally-OFF GaN devices with low ON-state resistance.

Original languageEnglish
Article number9511633
Pages (from-to)4310-4316
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number9
DOIs
Publication statusPublished - 1 Sept 2021

Keywords

  • AlGaN/GaN
  • MIS-high electron mobility transistors (HEMTs)
  • ON-resistance
  • ZrO
  • breakdown voltage
  • normally-OFF

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