Lattice distortion in In 3 SbTe 2 phase change material with substitutional bi

Minho Choi, Heechae Choi, Seungchul Kim, Jinho Ahn*, Yong Tae Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Sb atoms in In 3 SbTe 2 (IST) are partially substituted by 3.2-5.5 at.% of Bi atoms. As a result, the NaCl crystal structure of IST is slightly distorted. The distorted inter-planar angles observed with fast Fourier transformation of the lattice images are within the maximum range of interplanar angles calculated by density functional theory. When the Bi content is increased, the crystallization temperature becomes relatively lower than that of IST, the activation energy decreases from 5.29 to 2.61 eV, and the specific heat and melting point are obviously reduced. Consequently, phase change random access memory (PRAM) fabricated with Bi-doped IST (Bi-IST) can operate with lower power consumption than pure IST PRAM. The set and reset speeds of PRAM cells fabricated with Bi-IST are both 100 ns with 5.5 at.% Bi, which are obviously faster than the switching speeds of PRAM cells fabricated with IST and Ge 2 Sb 2 Te 5 (GST). These experimental results reveal that the switching speed is closely related with the thermal properties of the distorted lattice structure.

Original languageEnglish
Article number12867
JournalScientific Reports
Publication statusPublished - 11 Aug 2015
Externally publishedYes


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