Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3charge trapping layer

Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

2 Citations (Scopus)

Abstract

In this paper, normally-OFF AlGaN/GaN high electron mobility transistors (MIS-HEMTs) with partially recessed gate and Al2O3/ZrOx/Al2O3 charge trapping layer gate dielectrics (CTL) are studied. The threshold voltage (Vth) of the proposed CTL-HEMTs is 1.56 V, the sub-threshold slope (S.S) is 90 mV/dec and ION/IOFF ratio is 108. Moreover, saturation drain current (IDmax) and low on-resistance (RON) of CTL-HEMTs is 732 mA/mm and 7.9 Ω•mm (LGS = 3μm). Furthermore, the Bi-direction C-V measurement of the MIS-capacitors was measured to explore the charge trapping behavior. The experimental results prove the potential of ZrOx CTL to realize the normally-OFF operation MIS-HEMTs with desired performance.

Original languageEnglish
Title of host publicationProceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
EditorsXuan-Tu Tran, Duy-Hieu Bui
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages89-92
Number of pages4
ISBN (Electronic)9781665459013
DOIs
Publication statusPublished - 2022
Event2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 - Hanoi, Viet Nam
Duration: 21 Sept 202223 Sept 2022

Publication series

NameProceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022

Conference

Conference2022 IEEE International Conference on IC Design and Technology, ICICDT 2022
Country/TerritoryViet Nam
CityHanoi
Period21/09/2223/09/22

Keywords

  • AlO
  • GaN
  • MIS-HEMTs
  • normally-OFF
  • ZrO

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