@inproceedings{7498e9c2ed3d41f6882dccc312668232,
title = "Investigation of anomalous capacitance-voltage behavior caused by interface dipoles and the effect of post-metal-annealing",
abstract = "Anomalous capacitance-voltage (CV) behavior was observed in MOS devices with zirconium oxide gate dielectrics using pulse CV technique. The relative positions of up and down CV traces measured by pulse technique were opposite to those by conventional CV measurement. This unusual phenomenon cannot be inconsistently explained by charge trapping and de-trapping mechanisms. Therefore, a hypothesis related with interface dipoles was proposed. With regard to the formation of the interface dipole, it may be related to the oxygen density difference between the high-k layer and native SiOx layer. In addition, this anomaly was sensitive to growth temperature as well as post-metal-annealing process. However, after annealing in either nitrogen or forming gas ambient, the relative positions of up and down CV curves measured by the pulse technique were consistent with those obtained by conventional CV measurement.",
keywords = "Anomalous capacitance-voltage, MOS, Zr(NMe)",
author = "Qifeng Lu and Zhao, {Ce Zhou} and Chun Zhao and Steve Taylor and Chalker, {Paul R.}",
note = "Funding Information: This research was funded in part by the National Natural and Science Foundation of China under the grant no. 11375146 and the platform promotion for Suzhou Municipal Key Lab “New Energy and Environmental Protection Techniques”. Publisher Copyright: {\textcopyright} 2017 Author(s).; 4th International Conference on the Advancement of Materials and Nanotechnology, ICAMN 2016 ; Conference date: 09-11-2016 Through 11-11-2016",
year = "2017",
month = sep,
day = "11",
doi = "10.1063/1.4999875",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Roshidah Rusdi and Mastuli, {Mohd Sufri} and Nurhanna Badar and Norlida Kamarulzaman",
booktitle = "4th International Conference on the Advancement of Materials and Nanotechnology, ICAMN IV 2016",
}