Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes

Alagesan Subramanian, Zhenghui Pan, Zhenbo Zhang, Imtiaz Ahmad, Jing Chen, Meinan Liu, Shuang Cheng, Yijun Xu, Jun Wu, Wei Lei*, Qasim Khan, Yuegang Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium-doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency of 2210 cd m-2, and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO2 compared to that for undoped TiO2-based devices.

Original languageEnglish
Pages (from-to)13236-13243
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number15
DOIs
Publication statusPublished - 18 Apr 2018
Externally publishedYes

Keywords

  • charge carrier balance
  • CsPbBr quantum dots
  • Fermi-level tuning
  • inverted light-emitting diodes
  • lithium doping
  • TiO nanoparticles

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