Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga2O3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition

Yi Shen, Hong Ping Ma*, Zhen Yu Wang, Lin Gu, Jie Zhang, Ao Li, Ming Yang Yang, Qing Chun Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.

Original languageEnglish
Article number301
JournalCrystals
Volume13
Issue number2
DOIs
Publication statusPublished - Feb 2023
Externally publishedYes

Keywords

  • annealing effect
  • electrical properties
  • energy band alignment
  • plasma-enhanced atomic layer deposition
  • Sn-doped GaO film

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