Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter

Fan Li, Ang Li, Shiqiang Wu, Weisheng Wang, Yuhao Zhu, Guo Hao Yu, Zhongming Zeng, Baoshun Zhang, Jiangmin Gu, Wen Liu

Research output: Contribution to journalArticlepeer-review

Abstract

This article presents a monolithic integrated circuit (IC) platform based on the p-GaN gated HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC power conversion at a switching frequency of 1 MHz is realized. The peripheral enhancement/depletion (E/D-) mode devices formed circuit components, and monolithically integrated with the power device. This is the first H-treated p-GaN platform for the monolithic GaN mixed-signal power IC, the D-mode device will employ the H-treated p-GaN layer as the gate dielectric, with no additional insulator layer. The corresponding ASM-HEMT models have been calibrated for the computer-aided circuit design. Excellent agreement between simulation and static/dynamic experimental results have also been verified with inverters and comparators.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIEEE Electron Device Letters
DOIs
Publication statusAccepted/In press - 2024
Externally publishedYes

Keywords

  • ASM Simulation
  • DC-DC Converter
  • Gallium nitride
  • GaN Circuits
  • GaN HEMT
  • HEMTs
  • Hydrogen
  • Hydrogen Plasma Treatment
  • Integrated circuit modeling
  • Logic gates
  • MODFETs
  • Monolithic Integration
  • Solid modeling

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