High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques

Xuanming Zhang; Yuanlei Zhang; Jiachen Duan; Zhiwei Sun; Weisheng Wang; Ye Liang; Xuelin Yang; Lisheng Zhang; Zhenghao Chen; Jie Zhang; Kain Lu Low; Wen Liu

doi:10.1109/TED.2024.3493056

High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques

Xuanming Zhang, Yuanlei Zhang, Jiachen Duan, Zhiwei Sun, Weisheng Wang, Ye Liang, Xuelin Yang, Lisheng Zhang, Zhenghao Chen, Jie Zhang, Kain Lu Low^*, Wen Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This article presents the enhancement-mode (E-mode) GaN p-channel heterojunction field-effect transistors (p-FETs) with p-Al_0.05 Ga_0.95N etching-target layer (ETL). The optimized high-selectivity etching technique achieves an etch rate of approximately 1 nm/min for p-GaN, while also generating a selectivity ratio of 4:1 between p-GaN and p-Al_0.05Ga_0.95N. High-yield E-mode p-FET with ETL has been obtained as the etching process window was expanded to 10 min. The devices achieved the characteristics of a threshold voltage (Vth) of -1.15 V and a maximum current density (IDmax) of 6.16 mA/mm. Furthermore, the characteristics of multiple devices demonstrate the high consistency and reproducibility of p-FETs' Vth and ION, thus providing significant opportunities for developing complementary circuit integration.

Original language	English
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2024.3493056
Publication status	Accepted/In press - 2024

Keywords

AlGaN
high-selectivity etching
p-channel heterojunction field-effect transistor (p-FET)
p-GaN

Access to Document

10.1109/TED.2024.3493056

Cite this

@article{ce674de30a9c457f8908c24c6c54ce19,

title = "High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques",

abstract = "This article presents the enhancement-mode (E-mode) GaN p-channel heterojunction field-effect transistors (p-FETs) with p-Al0.05 Ga0.95N etching-target layer (ETL). The optimized high-selectivity etching technique achieves an etch rate of approximately 1 nm/min for p-GaN, while also generating a selectivity ratio of 4:1 between p-GaN and p-Al0.05Ga0.95N. High-yield E-mode p-FET with ETL has been obtained as the etching process window was expanded to 10 min. The devices achieved the characteristics of a threshold voltage (Vth) of -1.15 V and a maximum current density (IDmax) of 6.16 mA/mm. Furthermore, the characteristics of multiple devices demonstrate the high consistency and reproducibility of p-FETs' Vth and ION, thus providing significant opportunities for developing complementary circuit integration.",

keywords = "AlGaN, high-selectivity etching, p-channel heterojunction field-effect transistor (p-FET), p-GaN",

author = "Xuanming Zhang and Yuanlei Zhang and Jiachen Duan and Zhiwei Sun and Weisheng Wang and Ye Liang and Xuelin Yang and Lisheng Zhang and Zhenghao Chen and Jie Zhang and Low, {Kain Lu} and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

doi = "10.1109/TED.2024.3493056",

language = "English",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

}

TY - JOUR

T1 - High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques

AU - Zhang, Xuanming

AU - Zhang, Yuanlei

AU - Duan, Jiachen

AU - Sun, Zhiwei

AU - Wang, Weisheng

AU - Liang, Ye

AU - Yang, Xuelin

AU - Zhang, Lisheng

AU - Chen, Zhenghao

AU - Zhang, Jie

AU - Low, Kain Lu

AU - Liu, Wen

PY - 2024

Y1 - 2024

N2 - This article presents the enhancement-mode (E-mode) GaN p-channel heterojunction field-effect transistors (p-FETs) with p-Al0.05 Ga0.95N etching-target layer (ETL). The optimized high-selectivity etching technique achieves an etch rate of approximately 1 nm/min for p-GaN, while also generating a selectivity ratio of 4:1 between p-GaN and p-Al0.05Ga0.95N. High-yield E-mode p-FET with ETL has been obtained as the etching process window was expanded to 10 min. The devices achieved the characteristics of a threshold voltage (Vth) of -1.15 V and a maximum current density (IDmax) of 6.16 mA/mm. Furthermore, the characteristics of multiple devices demonstrate the high consistency and reproducibility of p-FETs' Vth and ION, thus providing significant opportunities for developing complementary circuit integration.

AB - This article presents the enhancement-mode (E-mode) GaN p-channel heterojunction field-effect transistors (p-FETs) with p-Al0.05 Ga0.95N etching-target layer (ETL). The optimized high-selectivity etching technique achieves an etch rate of approximately 1 nm/min for p-GaN, while also generating a selectivity ratio of 4:1 between p-GaN and p-Al0.05Ga0.95N. High-yield E-mode p-FET with ETL has been obtained as the etching process window was expanded to 10 min. The devices achieved the characteristics of a threshold voltage (Vth) of -1.15 V and a maximum current density (IDmax) of 6.16 mA/mm. Furthermore, the characteristics of multiple devices demonstrate the high consistency and reproducibility of p-FETs' Vth and ION, thus providing significant opportunities for developing complementary circuit integration.

KW - AlGaN

KW - high-selectivity etching

KW - p-channel heterojunction field-effect transistor (p-FET)

KW - p-GaN

UR - http://www.scopus.com/inward/record.url?scp=85211008975&partnerID=8YFLogxK

U2 - 10.1109/TED.2024.3493056

DO - 10.1109/TED.2024.3493056

M3 - Article

AN - SCOPUS:85211008975

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this