High-speed mixed signal and RF circuit design with compact waffle MOSFET

Xibo Zhang, Sang Lam, P. K. Ko, Mansun Chan

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

8 Citations (Scopus)


A compact waffle MOSFET layout scheme is used to fabricate high-speed mixed-signal circuits and RF circuits. Due to the compactness of the waffle MOSFET, it saves more than 30% of chip area. The extracted parameters indicate a 20-40% reduction in source/drain diffusion capacitance and gate resistance. This reduction results in more than 10% improvement in the propagation delay of buffer circuits and an increase in the unity-gain frequency and phase margin of a high-speed two-stage operational amplifier. An active inductor designed with compact waffle MOSFET also gets higher Q value.

Original languageEnglish
Title of host publicationProceedings - 2002 IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780374290
Publication statusPublished - 2002
Externally publishedYes
Event9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002 - Hong Kong, China
Duration: 22 Jun 2002 → …

Publication series

NameProceedings of the IEEE Hong Kong Electron Devices Meeting


Conference9th IEEE Hong Kong Electron Devices Meeting, HKEDM 2002
CityHong Kong
Period22/06/02 → …


  • Active inductors
  • CMOS technology
  • Capacitance
  • Circuit synthesis
  • FETs
  • MOSFET circuits
  • Operational amplifiers
  • RF signals
  • Radio frequency
  • Radiofrequency amplifiers

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