High-performance self-powered ultraviolet photodetector based on nano-porous GaN and CoPc p-n vertical heterojunction

Yan Xiao, Lin Liu, Zhi Hao Ma, Bo Meng, Su Jie Qin*, Ge Bo Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p-n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm-2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.

Original languageEnglish
Article number1198
Issue number9
Publication statusPublished - Sept 2019


  • Organic/inorganic hybrids
  • P-n heterojunction
  • Self-powered

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