High-isolation bonding pad with depletion-insulation structure for RF/microwave integrated circuits on bulk silicon CMOS

Sang Lam*, Wing Hung Ki, Mansun Chan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Bonding pads for RF/microwave integrated circuits on bulk silicon CMOS is designed with a simple depletion-insulation (DI) structure. Experimental results show high isolation and low substrate loss. An inter-pad isolation of more than 40dB at 10GHz is obtained for a 90-μm separation distance. The isolation is about two orders of magnitude higher than that of the conventional structure. The return loss is also less than 1.5dB at 10GHz. The high Q factor of the DI pad is achieved a few times greater that of the conventional type. The low pad capacitance of about 0.013fF/μm2 is attained. This will increase the resonant frequency of the bond-wire-pad connection. The application of the useful DI structure is extendable to interconnect and planar spiral inductor to reduce the substrate loss and increase the Q factor.

Original languageEnglish
Pages (from-to)677-680
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2002
Externally publishedYes
EventIEEE MSS-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2 Jun 20027 Jun 2002

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