TY - GEN
T1 - High frequency characteristics of MOSFETs with compact waffle layout
AU - Wu, Wen
AU - Lam, Sang
AU - Ko, Ping K.
AU - Chan, Mansun
PY - 2004
Y1 - 2004
N2 - The high frequency characteristics of waffle MOSFETs are studied. In addition to area saving, the waffle MOSFETs also provide enhancement to the RF characteristics. When compared with the conventional multi-finger layout with the same device width, the waffle MOSFETs provide extra flexibility in the design window. Measured S-parameters from a 0.35 μm technology process over a wide range of bias conditions indicate the waffle MOSFET is capable to offer enhancements in fmax, fT, and minimum noise figure with careful design.
AB - The high frequency characteristics of waffle MOSFETs are studied. In addition to area saving, the waffle MOSFETs also provide enhancement to the RF characteristics. When compared with the conventional multi-finger layout with the same device width, the waffle MOSFETs provide extra flexibility in the design window. Measured S-parameters from a 0.35 μm technology process over a wide range of bias conditions indicate the waffle MOSFET is capable to offer enhancements in fmax, fT, and minimum noise figure with careful design.
UR - http://www.scopus.com/inward/record.url?scp=17644379093&partnerID=8YFLogxK
M3 - Conference Proceeding
AN - SCOPUS:17644379093
SN - 0780384784
SN - 9780780384781
T3 - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
SP - 381
EP - 384
BT - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
Y2 - 21 September 2004 through 23 September 2004
ER -