Evaluations of GaN-on-Si devices for Power Electronics Applications

Huiqing Wen; Wen Liu; Cezhou Zhao

doi:10.1109/ICSICT.2018.8565656

Evaluations of GaN-on-Si devices for Power Electronics Applications

Huiqing Wen, Wen Liu, Cezhou Zhao

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects.

Original language	English
Title of host publication	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
Editors	Ting-Ao Tang, Fan Ye, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538644409
DOIs	https://doi.org/10.1109/ICSICT.2018.8565656
Publication status	Published - 5 Dec 2018
Event	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China Duration: 31 Oct 2018 → 3 Nov 2018

Publication series

Name	2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference	14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
Country/Territory	China
City	Qingdao
Period	31/10/18 → 3/11/18

Access to Document

10.1109/ICSICT.2018.8565656

Cite this

Wen, H., Liu, W., & Zhao, C. (2018). Evaluations of GaN-on-Si devices for Power Electronics Applications. In T.-A. Tang, F. Ye, & Y.-L. Jiang (Eds.), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings Article 8565656 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2018.8565656

Wen, Huiqing ; Liu, Wen ; Zhao, Cezhou. / Evaluations of GaN-on-Si devices for Power Electronics Applications. 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. editor / Ting-Ao Tang ; Fan Ye ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

@inproceedings{0674ce4c0d234e6ea00b0c1ec3083a14,

title = "Evaluations of GaN-on-Si devices for Power Electronics Applications",

abstract = "As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects.",

author = "Huiqing Wen and Wen Liu and Cezhou Zhao",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 ; Conference date: 31-10-2018 Through 03-11-2018",

year = "2018",

month = dec,

day = "5",

doi = "10.1109/ICSICT.2018.8565656",

language = "English",

series = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Ting-Ao Tang and Fan Ye and Yu-Long Jiang",

booktitle = "2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings",

}

Wen, H , Liu, W & Zhao, C 2018, Evaluations of GaN-on-Si devices for Power Electronics Applications. in T-A Tang, F Ye & Y-L Jiang (eds), 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings., 8565656, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018, Qingdao, China, 31/10/18. https://doi.org/10.1109/ICSICT.2018.8565656

Evaluations of GaN-on-Si devices for Power Electronics Applications. / Wen, Huiqing ; Liu, Wen; Zhao, Cezhou.
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. ed. / Ting-Ao Tang; Fan Ye; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2018. 8565656 (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Evaluations of GaN-on-Si devices for Power Electronics Applications

AU - Wen, Huiqing

AU - Liu, Wen

AU - Zhao, Cezhou

PY - 2018/12/5

Y1 - 2018/12/5

N2 - As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects.

AB - As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects.

UR - http://www.scopus.com/inward/record.url?scp=85060302913&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2018.8565656

DO - 10.1109/ICSICT.2018.8565656

M3 - Conference Proceeding

AN - SCOPUS:85060302913

T3 - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

BT - 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

A2 - Tang, Ting-Ao

A2 - Ye, Fan

A2 - Jiang, Yu-Long

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018

Y2 - 31 October 2018 through 3 November 2018

ER -

Wen H , Liu W, Zhao C. Evaluations of GaN-on-Si devices for Power Electronics Applications. In Tang TA, Ye F, Jiang YL, editors, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8565656. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings). doi: 10.1109/ICSICT.2018.8565656

Evaluations of GaN-on-Si devices for Power Electronics Applications

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