TY - GEN
T1 - Estimation of minority carrier lifetime in InGaN single junction solar cell
AU - Alom, Md Zahangir
AU - Hasan, Md Soyaeb
AU - Islam, Md Rafiqul
AU - Mehedi, Ibrahim Mustafa
AU - Dobaie, Abdullah M.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/3/7
Y1 - 2016/3/7
N2 - The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.
AB - The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.
KW - excess carrier concentration
KW - InGaN
KW - Minority carrier lifetime
KW - single junction solar cell
UR - http://www.scopus.com/inward/record.url?scp=84966593829&partnerID=8YFLogxK
U2 - 10.1109/CEEE.2015.7428271
DO - 10.1109/CEEE.2015.7428271
M3 - Conference Proceeding
AN - SCOPUS:84966593829
T3 - ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering
SP - 257
EP - 260
BT - ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st International Conference on Electrical and Electronic Engineering, ICEEE 2015
Y2 - 4 November 2015 through 6 November 2015
ER -