@inproceedings{6d3e07d474ff466d922204790dfac344,
title = "Enabling hetero-integration of III-V and Ge-based transistors on silicon with ultra-thin buffers formed by interfacial misfit technique",
abstract = "In this paper, we discuss the application of the interfacial misfit (IMF) technique to enable the heterogeneous integration of III-V and Ge-based transistors on Si substrates. Ge pFETs and InAs nFETs were co-integrated on a Si substrate using common contact formation, digital etch, and gate stack formation modules. In addition, vertically stacked nanowire (NW) GaSb pFETs and InAs nFETs on Si substrates were also realized.",
author = "Xiao Gong and Sachin Yadav and Goh, {Kian Hui} and Tan, {Kian Hua} and Annie and Low, {Kian Lu} and Bowen Jia and Yoon, {Soon Fatt} and Gengchiau Liang and Yeo, {Yee Chia}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",
year = "2016",
doi = "10.1149/07508.0421ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "421--437",
editor = "J. Murota and B. Tillack and M. Caymax and G. Masini and Harame, {D. L.} and S. Miyazaki",
booktitle = "SiGe, Ge, and Related Materials",
edition = "8",
}