Electron mobility in β-Ga2O3: an ensemble Monte Carlo study

Zi Chang Zhang, Ye Wu, Chao Lu, Shaikh Ahmed*

*Corresponding author for this work

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13 Citations (Scopus)


Numerical simulations are performed to evaluate electron mobility in β-Ga2O3. Following scattering mechanisms were found to be important: acoustic deformation potential, ionized impurity, and polar optical phonons. In β-Ga2O3, a large primitive unit cell (containing ten atoms) leads to multiple phonon modes, which complicate the mobility calculation. Here, by restructuring an in-house ensemble Monte Carlo simulator, we were able to include and examine the effects of all relevant longitudinal optical phonon modes. For low electrical fields at 300 K, we report an electron mobility of 110 cm2/V s. Also, in the range of 150‒500 K, our simulation results match very well with the reported Hall mobility measurement data.

Original languageEnglish
Article number637
JournalApplied Physics A: Materials Science and Processing
Issue number9
Publication statusPublished - 1 Sept 2018
Externally publishedYes

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