TY - GEN
T1 - Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation
AU - Qu, Zifeng
AU - Jiang, Yizhou
AU - Zhang, Yichi
AU - Wen, Huiqing
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, AlGaN/GaN fin-shaped high-electron mobility transistors (Fin-HEMTs) with different gate structures are simulated in 3-D TCAD. By comparing the transfer and transconductance curves and observing the two-dimensional electron gas (2-DEG) distribution underneath the gate, the effect of gate variations on the threshold voltage of AlGaN/GaN Fin-HEMTs is investigated in three dimensions: width, height, and length. The results show that Fin devices have better gate control compared to planar devices and that the threshold voltage of Fin devices is inversely proportional to the width of the gate and, conversely, proportional to the height and length of the gate, which provides a reference for miniaturized device design.
AB - In this paper, AlGaN/GaN fin-shaped high-electron mobility transistors (Fin-HEMTs) with different gate structures are simulated in 3-D TCAD. By comparing the transfer and transconductance curves and observing the two-dimensional electron gas (2-DEG) distribution underneath the gate, the effect of gate variations on the threshold voltage of AlGaN/GaN Fin-HEMTs is investigated in three dimensions: width, height, and length. The results show that Fin devices have better gate control compared to planar devices and that the threshold voltage of Fin devices is inversely proportional to the width of the gate and, conversely, proportional to the height and length of the gate, which provides a reference for miniaturized device design.
UR - http://www.scopus.com/inward/record.url?scp=85184664591&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS60785.2023.10399690
DO - 10.1109/SSLChinaIFWS60785.2023.10399690
M3 - Conference Proceeding
AN - SCOPUS:85184664591
T3 - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
SP - 183
EP - 186
BT - 2023 20th China International Forum on Solid State Lighting and 2023 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023
Y2 - 27 November 2023 through 30 November 2023
ER -