Effects of Y Dopant on Lattice Distortion and Electrical Properties of In3SbTe2 Phase-Change Material

Minho Choi; Heechae Choi; Sehyun Kwon; Seungchul Kim; Kwang Ryeol Lee; Jinho Ahn; Yong Tae Kim

doi:10.1002/pssr.201700275

Effects of Y Dopant on Lattice Distortion and Electrical Properties of In₃SbTe₂ Phase-Change Material

Minho Choi, Heechae Choi, Sehyun Kwon, Seungchul Kim^*, Kwang Ryeol Lee, Jinho Ahn, Yong Tae Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Using a computational high-throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In₃SbTe₂ (IST) phase-change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y-doped IST (Y-IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y-IST phase-change memory is faster than IST and Ge₂Sb₂Te₅ (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y-IST device is also less than a fourth of that of the GST device.

Original language	English
Article number	1700275
Journal	Physica Status Solidi - Rapid Research Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1002/pssr.201700275
Publication status	Published - Nov 2017
Externally published	Yes

Keywords

InSbTe
distortion
doping
phase change materials
phase change memory

Access to Document

10.1002/pssr.201700275

Cite this

@article{340cf8319d0b4966bb742592fbabb40d,

title = "Effects of Y Dopant on Lattice Distortion and Electrical Properties of In3SbTe2 Phase-Change Material",

abstract = "Using a computational high-throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In3SbTe2 (IST) phase-change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y-doped IST (Y-IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y-IST phase-change memory is faster than IST and Ge2Sb2Te5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y-IST device is also less than a fourth of that of the GST device.",

keywords = "InSbTe, distortion, doping, phase change materials, phase change memory",

author = "Minho Choi and Heechae Choi and Sehyun Kwon and Seungchul Kim and Lee, {Kwang Ryeol} and Jinho Ahn and Kim, {Yong Tae}",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = nov,

doi = "10.1002/pssr.201700275",

language = "English",

volume = "11",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

number = "11",

}

TY - JOUR

T1 - Effects of Y Dopant on Lattice Distortion and Electrical Properties of In3SbTe2 Phase-Change Material

AU - Choi, Minho

AU - Choi, Heechae

AU - Kwon, Sehyun

AU - Kim, Seungchul

AU - Lee, Kwang Ryeol

AU - Ahn, Jinho

AU - Kim, Yong Tae

PY - 2017/11

Y1 - 2017/11

N2 - Using a computational high-throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In3SbTe2 (IST) phase-change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y-doped IST (Y-IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y-IST phase-change memory is faster than IST and Ge2Sb2Te5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y-IST device is also less than a fourth of that of the GST device.

AB - Using a computational high-throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In3SbTe2 (IST) phase-change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y-doped IST (Y-IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y-IST phase-change memory is faster than IST and Ge2Sb2Te5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y-IST device is also less than a fourth of that of the GST device.

KW - InSbTe

KW - distortion

KW - doping

KW - phase change materials

KW - phase change memory

UR - http://www.scopus.com/inward/record.url?scp=85030089311&partnerID=8YFLogxK

U2 - 10.1002/pssr.201700275

DO - 10.1002/pssr.201700275

M3 - Article

AN - SCOPUS:85030089311

SN - 1862-6254

VL - 11

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 11

M1 - 1700275

ER -

Effects of Y Dopant on Lattice Distortion and Electrical Properties of In₃SbTe₂ Phase-Change Material

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this