Effects of spacer thickness on noise performance of bipolar transistors

Wai Kit Lee*, Sang Lam, Mansun Chan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.

Original languageEnglish
Pages (from-to)1534-1537
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 1 Sept 2004
Externally publishedYes

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