Effects of layout methods of RF CMOS on noise performance

Wen Wu; Sang Lam; Mansun Chan

doi:10.1109/TED.2005.859694

Effects of layout methods of RF CMOS on noise performance

Wen Wu^*, Sang Lam, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

This paper presents a study on the effects of different layout methods on the noise performance of RF CMOS transistors. The optimization of RF characteristics using multifinger layout and a more compact waffle layout with Manhattan-oriented polysilicon gate are studied. The waffle layout is demonstrated to have a larger design window through the simulation as well as the experimental data. The improvement of both the maximum oscillation frequency f_max and the cutoff frequency f_T at the same biasing condition leads to the improvement on RF noise performance for the waffle MOSFETs. Compared with the multifinger devices, the SpectreRF simulation reveals that 10% reduction in noise figure is achieved when the waffle MOSFETs are used in CMOS low-noise amplifiers.

Original language	English
Pages (from-to)	2753-2759
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	12
DOIs	https://doi.org/10.1109/TED.2005.859694
Publication status	Published - Dec 2005
Externally published	Yes

Keywords

Cutoff frequency
Layout
MOSFET
Maximum oscillation frequency
Noise
Radio frequency (RF)

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10.1109/TED.2005.859694

Cite this

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title = "Effects of layout methods of RF CMOS on noise performance",

abstract = "This paper presents a study on the effects of different layout methods on the noise performance of RF CMOS transistors. The optimization of RF characteristics using multifinger layout and a more compact waffle layout with Manhattan-oriented polysilicon gate are studied. The waffle layout is demonstrated to have a larger design window through the simulation as well as the experimental data. The improvement of both the maximum oscillation frequency fmax and the cutoff frequency fT at the same biasing condition leads to the improvement on RF noise performance for the waffle MOSFETs. Compared with the multifinger devices, the SpectreRF simulation reveals that 10% reduction in noise figure is achieved when the waffle MOSFETs are used in CMOS low-noise amplifiers.",

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author = "Wen Wu and Sang Lam and Mansun Chan",

note = "Funding Information: Manuscript received March 11, 2005; revised August 12, 2005. This work was supported by the Research Grant Council of Hong Kong under a Competitive Earmarked Research Grant. The review of this paper was arranged by Editor M. J. Deen.",

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AU - Lam, Sang

AU - Chan, Mansun

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N2 - This paper presents a study on the effects of different layout methods on the noise performance of RF CMOS transistors. The optimization of RF characteristics using multifinger layout and a more compact waffle layout with Manhattan-oriented polysilicon gate are studied. The waffle layout is demonstrated to have a larger design window through the simulation as well as the experimental data. The improvement of both the maximum oscillation frequency fmax and the cutoff frequency fT at the same biasing condition leads to the improvement on RF noise performance for the waffle MOSFETs. Compared with the multifinger devices, the SpectreRF simulation reveals that 10% reduction in noise figure is achieved when the waffle MOSFETs are used in CMOS low-noise amplifiers.

AB - This paper presents a study on the effects of different layout methods on the noise performance of RF CMOS transistors. The optimization of RF characteristics using multifinger layout and a more compact waffle layout with Manhattan-oriented polysilicon gate are studied. The waffle layout is demonstrated to have a larger design window through the simulation as well as the experimental data. The improvement of both the maximum oscillation frequency fmax and the cutoff frequency fT at the same biasing condition leads to the improvement on RF noise performance for the waffle MOSFETs. Compared with the multifinger devices, the SpectreRF simulation reveals that 10% reduction in noise figure is achieved when the waffle MOSFETs are used in CMOS low-noise amplifiers.

KW - Cutoff frequency

KW - Layout

KW - MOSFET

KW - Maximum oscillation frequency

KW - Noise

KW - Radio frequency (RF)

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Effects of layout methods of RF CMOS on noise performance

Abstract

Keywords

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