Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach

Ibne Sabid; Soyaeb Hasan; Md Fahim-Al-Fattah; Rafiqul Islam; Ibrahim Mustafa Mehedi

doi:10.1109/EICT.2015.7391995

Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach

Ibne Sabid, Soyaeb Hasan, Md Fahim-Al-Fattah, Rafiqul Islam, Ibrahim Mustafa Mehedi

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

3 Citations (Scopus)

Abstract

In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase in the number of junction (24.4-43.56% for single-six junction solar cells) while considering no dislocation. Whereas it is found that the efficiency is affected when dislocation density (1001-1013m-2) is incorporated for analyzing the performances of either single junction (24.47-8.25%) or multi junction solar cell (43.56-15.25% for six junctions). The effect of dislocation density on minority carrier life time is also been anticipated in this study.

Original language	English
Title of host publication	2nd International Conference on Electrical Information and Communication Technologies, EICT 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	451-455
Number of pages	5
ISBN (Electronic)	9781467392570
DOIs	https://doi.org/10.1109/EICT.2015.7391995
Publication status	Published - 25 Jan 2016
Externally published	Yes
Event	2nd International Conference on Electrical Information and Communication Technologies, EICT 2015 - Khulna, Bangladesh Duration: 10 Dec 2015 → 12 Dec 2015

Publication series

Name	2nd International Conference on Electrical Information and Communication Technologies, EICT 2015

Conference

Conference	2nd International Conference on Electrical Information and Communication Technologies, EICT 2015
Country/Territory	Bangladesh
City	Khulna
Period	10/12/15 → 12/12/15

Keywords

Dislocation density
Minority carrier diffusion length
Multi Junction (MJ)
Recombination center

Access to Document

10.1109/EICT.2015.7391995

Cite this

Sabid, I., Hasan, S., Fahim-Al-Fattah, M., Islam, R., & Mehedi, I. M. (2016). Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach. In 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015 (pp. 451-455). Article 7391995 (2nd International Conference on Electrical Information and Communication Technologies, EICT 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EICT.2015.7391995

Sabid, Ibne ; Hasan, Soyaeb ; Fahim-Al-Fattah, Md et al. / Effect of dislocation density on the performance of InGaN-based MJ solar cell : Analytical approach. 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 451-455 (2nd International Conference on Electrical Information and Communication Technologies, EICT 2015).

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title = "Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach",

abstract = "In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase in the number of junction (24.4-43.56% for single-six junction solar cells) while considering no dislocation. Whereas it is found that the efficiency is affected when dislocation density (1001-1013m-2) is incorporated for analyzing the performances of either single junction (24.47-8.25%) or multi junction solar cell (43.56-15.25% for six junctions). The effect of dislocation density on minority carrier life time is also been anticipated in this study.",

keywords = "Dislocation density, Minority carrier diffusion length, Multi Junction (MJ), Recombination center",

author = "Ibne Sabid and Soyaeb Hasan and Md Fahim-Al-Fattah and Rafiqul Islam and Mehedi, {Ibrahim Mustafa}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015 ; Conference date: 10-12-2015 Through 12-12-2015",

year = "2016",

month = jan,

day = "25",

doi = "10.1109/EICT.2015.7391995",

language = "English",

series = "2nd International Conference on Electrical Information and Communication Technologies, EICT 2015",

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Sabid, I, Hasan, S, Fahim-Al-Fattah, M, Islam, R & Mehedi, IM 2016, Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach. in 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015., 7391995, 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015, Institute of Electrical and Electronics Engineers Inc., pp. 451-455, 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015, Khulna, Bangladesh, 10/12/15. https://doi.org/10.1109/EICT.2015.7391995

Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach. / Sabid, Ibne; Hasan, Soyaeb; Fahim-Al-Fattah, Md et al.
2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 451-455 7391995 (2nd International Conference on Electrical Information and Communication Technologies, EICT 2015).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Effect of dislocation density on the performance of InGaN-based MJ solar cell

T2 - 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015

AU - Sabid, Ibne

AU - Hasan, Soyaeb

AU - Fahim-Al-Fattah, Md

AU - Islam, Rafiqul

AU - Mehedi, Ibrahim Mustafa

PY - 2016/1/25

Y1 - 2016/1/25

N2 - In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase in the number of junction (24.4-43.56% for single-six junction solar cells) while considering no dislocation. Whereas it is found that the efficiency is affected when dislocation density (1001-1013m-2) is incorporated for analyzing the performances of either single junction (24.47-8.25%) or multi junction solar cell (43.56-15.25% for six junctions). The effect of dislocation density on minority carrier life time is also been anticipated in this study.

AB - In this study the effect of dislocation density on the performance of InGaN based multi junction solar cell has been calculated analytically. It is found that dislocation density adversely affects the open circuit voltage, short circuit current density and conversion efficiency of a solar cell. Efficiency is found to be improved with the increase in the number of junction (24.4-43.56% for single-six junction solar cells) while considering no dislocation. Whereas it is found that the efficiency is affected when dislocation density (1001-1013m-2) is incorporated for analyzing the performances of either single junction (24.47-8.25%) or multi junction solar cell (43.56-15.25% for six junctions). The effect of dislocation density on minority carrier life time is also been anticipated in this study.

KW - Dislocation density

KW - Minority carrier diffusion length

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KW - Recombination center

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Sabid I, Hasan S, Fahim-Al-Fattah M, Islam R, Mehedi IM. Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach. In 2nd International Conference on Electrical Information and Communication Technologies, EICT 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 451-455. 7391995. (2nd International Conference on Electrical Information and Communication Technologies, EICT 2015). doi: 10.1109/EICT.2015.7391995

Effect of dislocation density on the performance of InGaN-based MJ solar cell: Analytical approach

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