Effect of annealing temperature for Ni/AlOx/Pt RRAM devices fabricated with solution-based dielectric

Zongjie Shen, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao*, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, Chun Zhao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (< 1.5 V), the highest ON/OFF ratio (> 104), the narrowest resistance distribution, the longest retention time (> 104 s) and the most endurance cycles (> 150).

Original languageEnglish
Article number446
Issue number7
Publication statusPublished - 1 Jul 2019


  • Annealing temperatures
  • Bipolar resistive switching characteristics
  • Resistive random access memory (RRAM)
  • Solution-based dielectric

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