Dielectric relaxation of lanthanum doped zirconium oxide

C. Z. Zhao, S. Taylor*, M. Werner, P. R. Chalker, R. T. Murray, J. M. Gaskell, A. C. Jones

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Lanthanum doped zirconium oxide (Lax - Zr1-x O2-δ) films, with La contents, up to x=0.35, were studied. Films were annealed at 900 °C to crystallize them into phases with higher κ -values. Increasing the La content suppressed the monoclinic phase and stabilized the tetragonal or cubic phase. The highest dielectric constant was obtained for a lightly doped film with a La content of x=0.09, for which a κ -value of 40 was obtained. This was accompanied by a significant dielectric relaxation, following a single Curie-von Schweidler power-law dependency with frequency, changing to a mixed Curie-von Schweidler and Kohlrausch-Williams-Watts relationships after annealing. The dielectric relaxation was most severe for lightly doped films, which had the highest κ -values. The dielectric relaxation appears to be related to the size of crystal grains formed during annealing, which was dependent on the doping level.

Original languageEnglish
Article number044102
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 2009


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