Dielectric relaxation of lanthanide-based ternary oxides: Physical and mathematical models

Chun Zhao, C. Z. Zhao*, Jing Tao, M. Werner, S. Taylor, P. R. Chalker

*Corresponding author for this work

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14 Citations (Scopus)


Cerium-doped hafnium oxides (Ce x Hf 1-x O 2) and lanthanum-doped zirconium oxides (La xZr 1-x O 2) were investigated. The highest dielectric constants, k, were obtained from lightly doped oxides with an La content of x = 0.09 and a Ce content of x = 0.1, for which k-values of 33 ∼ 40 were obtained. The dielectric relaxation appears to be related to the size of crystal grains formed during annealing, which was dependent on the doping level. The physical and mathematical models were used to analyze the relationship between k-values and frequencies. The variations in the k-values up to megahertz frequencies for both Ce x Hf 1-x O 2 and La xZr 1-x O 2 are simulated based on the Curie-von Schweidler (CS) or Havriliak-Negami (HN) relationships. Concerning the lightly doped Ce x Hf 1-x O 2 and La xZr 1-x O 2, the data extracted are best modeled by the HN law, while La x Zr 1-x O2 with doping level from x = 0.22 to 0.63 are best modelled based on the CS law.

Original languageEnglish
Article number241470
JournalJournal of Nanomaterials
Publication statusPublished - 2012

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