Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

C. Z. Zhao, M. Werner, S. Taylor, P. R. Chalker, A. C. Jones, Chun Zhao

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

Original languageEnglish
Article number48
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - Jan 2011


  • La

Cite this