Dielectric property of LaAlO3 thin films doped with magnetic Co and Co3O4 clusters

H. Jiang, H. W. Liu, H. Yu, F. Gao, J. M. Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The thin films of Co-doped and Co3O4-doped dielectric LaAlO3 (LAO) by co-ablation of magnetic metal Co and dielectric LAO on Pt - Ti - SiO2 - Si substrates have been prepared by pulsed laser deposition. A significant enhancement of dielectric constant of LAO upon doping of Co and cobalt oxide clusters is observed. Furthermore, modulation of the dielectric constant of the thin films by applying a magnetic field is verified, obviously due to the ferromagnetism of Co metal and Co oxide clusters embedded in the LAO thin films. A series of microstructural and dielectric characterizations on the as-prepared thin films have been performed and the mechanism underlying the dielectric enhancement upon the doping of Co and Co3O4 clusters is discussed.

Original languageEnglish
Pages (from-to)2676-2681
Number of pages6
JournalInternational Journal of Modern Physics B
Issue number15-17
Publication statusPublished - 10 Jul 2005
Externally publishedYes


  • Dielectric capacitance
  • Magnetism
  • Nanoparticle


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