Development of GaN Monolithic Integrated Circuits for Power Conversion

Yung C. Liang, Ruize Sun, Yee Chia Yeo, Cezhou Zhao

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

8 Citations (Scopus)

Abstract

This paper describes the development of a viable platform for the design of full GaN (Gallium Nitride) monolithic integrated circuits for power conversion applications. The Normally-on and normally-off AlGaN/GaN power HEMT devices are used for the integrated circuit design using the ADS (Advanced Design System) tool. A monolithic switched-mode DC-DC buck converter with integrated functional blocks and over-current protection is used to showcase the suitability of the development. The designed GaN power integrated circuit was fully fabricated and tested to verify its functionality in power conversion.

Original languageEnglish
Title of host publication2019 IEEE Custom Integrated Circuits Conference, CICC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538693957
DOIs
Publication statusPublished - Apr 2019
Event40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019 - Austin, United States
Duration: 14 Apr 201917 Apr 2019

Publication series

NameProceedings of the Custom Integrated Circuits Conference
Volume2019-April
ISSN (Print)0886-5930

Conference

Conference40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019
Country/TerritoryUnited States
CityAustin
Period14/04/1917/04/19

Keywords

  • GaN Integrated Circuit
  • Power Integrated Circuit

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