Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

Sang Lam; Hongmei Wang; Singh Jagar; Mansun Chan

doi:10.1109/ESSDERC.2001.195255

Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

Sang Lam^*, Hongmei Wang, Singh Jagar, Mansun Chan

^*Corresponding author for this work

Hong Kong University of Science and Technology

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

Methodology to fabricate wide MOSFETs on recrystallized large-grain polysilicon film is described. Experimental results show maximum g_m=68mS/mm and multigigahertz f_T of wide MOSFETs with L=L2μm. A ladder-structure layout is designed to further optimize the MOSFET performance. Device design strategies are also discussed.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Publisher	Editions Frontieres
Pages	279-282
Number of pages	4
ISBN (Electronic)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195255
Publication status	Published - 2001
Externally published	Yes
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 11 Sept 2001 → 13 Sept 2001

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	31st European Solid-State Device Research Conference, ESSDERC 2001
Country/Territory	Germany
City	Nuremberg
Period	11/09/01 → 13/09/01

Access to Document

10.1109/ESSDERC.2001.195255

Cite this

Lam, S., Wang, H., Jagar, S., & Chan, M. (2001). Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency. In H. Ryssel, G. Wachutka, & H. Grunbacher (Eds.), European Solid-State Device Research Conference (pp. 279-282). (European Solid-State Device Research Conference). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2001.195255

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title = "Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency",

abstract = "Methodology to fabricate wide MOSFETs on recrystallized large-grain polysilicon film is described. Experimental results show maximum gm=68mS/mm and multigigahertz fT of wide MOSFETs with L=L2μm. A ladder-structure layout is designed to further optimize the MOSFET performance. Device design strategies are also discussed.",

author = "Sang Lam and Hongmei Wang and Singh Jagar and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",

year = "2001",

doi = "10.1109/ESSDERC.2001.195255",

language = "English",

series = "European Solid-State Device Research Conference",

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booktitle = "European Solid-State Device Research Conference",

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Lam, S, Wang, H, Jagar, S & Chan, M 2001, Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, Editions Frontieres, pp. 279-282, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 11/09/01. https://doi.org/10.1109/ESSDERC.2001.195255

Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency. / Lam, Sang; Wang, Hongmei; Jagar, Singh et al.
European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. Editions Frontieres, 2001. p. 279-282 (European Solid-State Device Research Conference).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AB - Methodology to fabricate wide MOSFETs on recrystallized large-grain polysilicon film is described. Experimental results show maximum gm=68mS/mm and multigigahertz fT of wide MOSFETs with L=L2μm. A ladder-structure layout is designed to further optimize the MOSFET performance. Device design strategies are also discussed.

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PB - Editions Frontieres

T2 - 31st European Solid-State Device Research Conference, ESSDERC 2001

Y2 - 11 September 2001 through 13 September 2001

ER -

Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

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