Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

Sang Lam*, Hongmei Wang, Singh Jagar, Mansun Chan

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review


Methodology to fabricate wide MOSFETs on recrystallized large-grain polysilicon film is described. Experimental results show maximum gm=68mS/mm and multigigahertz fT of wide MOSFETs with L=L2μm. A ladder-structure layout is designed to further optimize the MOSFET performance. Device design strategies are also discussed.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHeiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
PublisherEditions Frontieres
Number of pages4
ISBN (Electronic)2914601018
Publication statusPublished - 2001
Externally publishedYes
Event31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany
Duration: 11 Sept 200113 Sept 2001

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876


Conference31st European Solid-State Device Research Conference, ESSDERC 2001

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