Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

Ruize Sun, Yung C. Liang*, Yee Chia Yeo, Yun Hsiang Wang, Cezhou Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC–DC buck converter design with integrated high-side gate driver, over-current protection, and pulse-width-modulation feedback control circuits based on full AlGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-ON and normally-OFF AlGaN/GaN MIS-HEMT devices, the DC–DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over-current protection function can properly protect the converter at a preset over-current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all-GaN DC–DC power converter design.

Original languageEnglish
Article number1600562
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume214
Issue number3
DOIs
Publication statusPublished - 1 Mar 2017

Keywords

  • AlGaN
  • GaN
  • buck converters
  • high electron mobility transistors
  • metal–insulator–semiconductor structures

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