Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform

Fan Li, Ang Li, Yubo Wang, Yuhao Zhu, Chengruiyuan Yu, Chengmurong Ding, Shiqiang Wu, Wen Liu*, Guohao Yu*, Xiaotian Gao, Zheming Wang, Baoshun Zhang

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

4 Citations (Scopus)

Abstract

This article presents comprehensive research on the 4-inch monolithic integrated circuit platform based on the hydro-gen passivated pGaN/AlGaN/GaN HEMTs technology. The com-parisons between H2 passivated device and traditional selectively etched pGaN gate device are made. The experimental results demonstrate that the H2 passivation layer not only provides higher breakdown voltage and lower current collapse effect but also enhances VTH stability under gate stresses. The circuit components, such as the 2DEG resistor, capacitor, and diode, are verified under a high-temperature environment to exploit the advantage of All-GaN integration. The depletion mode device is seamlessly integrated by applying the H2 passivated pGaN layer as the gate dielectric. This method no longer requires the growth of an additional gate dielectric layer, and the fabrication complexity can be reduced. The logic gates, comparator, and driver circuit are realized based on this achievement.

Original languageEnglish
Title of host publication35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages99-102
Number of pages4
ISBN (Electronic)9798350396829
DOIs
Publication statusPublished - 2023
Event35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023 - Hong Kong, China
Duration: 28 May 20231 Jun 2023

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2023-May
ISSN (Print)1063-6854

Conference

Conference35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
Country/TerritoryChina
CityHong Kong
Period28/05/231/06/23

Keywords

  • GaN HEMTs
  • HPassivation
  • IC Platform

Fingerprint

Dive into the research topics of 'Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform'. Together they form a unique fingerprint.

Cite this