Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

K. T.R. Reddy*, M. V. Reddy, M. Leach, J. K. Tan, D. Y. Jang, R. W. Miles

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

4 Citations (Scopus)

Abstract

Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Pages709-710
Number of pages2
Edition1
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India
Duration: 19 Dec 201123 Dec 2011

Publication series

NameAIP Conference Proceedings
Number1
Volume1447
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference56th DAE Solid State Physics Symposium 2011
Country/TerritoryIndia
CityKattankulathur, Tamilnadu
Period19/12/1123/12/11

Keywords

  • SnS films
  • Structural properties
  • X-ray diffraction

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