@inproceedings{9f46ba6ca4d74acfb06062fc9a896858,
title = "Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S",
abstract = "Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.",
keywords = "SnS films, Structural properties, X-ray diffraction",
author = "Reddy, {K. T.R.} and Reddy, {M. V.} and M. Leach and Tan, {J. K.} and Jang, {D. Y.} and Miles, {R. W.}",
year = "2012",
doi = "10.1063/1.4710200",
language = "English",
isbn = "9780735410442",
series = "AIP Conference Proceedings",
number = "1",
pages = "709--710",
booktitle = "Solid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011",
edition = "1",
note = "56th DAE Solid State Physics Symposium 2011 ; Conference date: 19-12-2011 Through 23-12-2011",
}