Comproportionation Reaction Synthesis to Realize High-Performance Water-Induced Metal-Oxide Thin-Film Transistors

Qihan Liu, Chun Zhao*, Ivona Z. Mitrovic, Wangying Xu, Li Yang, Ce Zhou Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Solution-processed metal-oxide thin films have been widely studied in low-power and flexible electronics. However, the high temperature required to form a condensed and uniform film limits their applications in flexible and low-cost electronics. Here, a novel and environmental-friendly comproportionation reaction synthesis (CRS) is presented to obtain amorphous aluminum oxide (AlOx) thin films for solution-processed thin-film transistors (TFTs) employing water as the precursor solvent. The thermal decomposition of CRS-AlOx precursor is completed at ≈300 °C, which is 100 °C lower than that of the conventional water-induced AlOx. The morphological, optical, compositional, and electrical properties of CRS-AlOx dielectric films are studied systematically. Meanwhile, TFTs based on water-induced In2O3 metal oxide semiconductor layers deposited on these dielectrics at low temperatures are formed and characterized. Compared with TFTs based on conventional AlOx showing low mobility and low clockwise hysteresis, In2O3 TFTs based on CRS-AlOx exhibit improved electrical performance and counterclockwise hysteresis in the transfer curves. Water-induced TFTs fabricated on CRS-AlOx formed at a low temperature of 250 °C have average mobility of 98 cm2 V−1 s−1. Through chemical composition characterization and electrical characterization, the high mobilities of TFTs based on CRS-AlOx dielectrics are correlated to trap states, which resulted in counterclockwise hysteresis in the transfer curves.

Original languageEnglish
Article number2000072
JournalAdvanced Electronic Materials
Volume6
Issue number8
DOIs
Publication statusPublished - 1 Aug 2020

Keywords

  • aqueous route
  • low operating voltage
  • low temperature processing
  • metal-oxide thin-film transistors
  • solution combustion synthesis

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