TY - JOUR
T1 - Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas
AU - Islam, Md Shofiqul
AU - Mehedi, Ibrahim Mustafa
N1 - Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/4/15
Y1 - 2016/4/15
N2 - This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.
AB - This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 °C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth.
KW - A1. In-situ doping
KW - A3. Vapor-liquid-solid (VLS) growth
KW - B1. Boron
KW - B1. Phosphorus
KW - B2. Doped Si microneedles
UR - http://www.scopus.com/inward/record.url?scp=84958149147&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2016.01.034
DO - 10.1016/j.jcrysgro.2016.01.034
M3 - Article
AN - SCOPUS:84958149147
SN - 0022-0248
VL - 440
SP - 55
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -