TY - GEN
T1 - Comparative analysis and parameter extraction of enhanced waffle MOSFET
AU - Wu, Wen
AU - Lam, Sang
AU - Ko, Ping K.
AU - Chan, Mansun
N1 - Publisher Copyright:
©2003 IEEE.
PY - 2003
Y1 - 2003
N2 - Unlike the traditional layout strategy in which large size transistors were fabricated by increasing the number of parallel polysilicon gates, waffle MOSFET with a novel structure is introduced due to its excellent expansibility and area efficiency. In this work a compact waffle MOSFET using an enhanced waffle-layout strategy is presented. Comparisons are made on two different layout implementations of wide transistors with the same dimensions using a standard 0.35-μm CMOS technology. With the proposed accurate model suitable to waffle MOSFET the small signal parameters are extracted and the experimental results demonstrate the benefits of waffle layout without any extra processing cost.
AB - Unlike the traditional layout strategy in which large size transistors were fabricated by increasing the number of parallel polysilicon gates, waffle MOSFET with a novel structure is introduced due to its excellent expansibility and area efficiency. In this work a compact waffle MOSFET using an enhanced waffle-layout strategy is presented. Comparisons are made on two different layout implementations of wide transistors with the same dimensions using a standard 0.35-μm CMOS technology. With the proposed accurate model suitable to waffle MOSFET the small signal parameters are extracted and the experimental results demonstrate the benefits of waffle layout without any extra processing cost.
UR - http://www.scopus.com/inward/record.url?scp=29044445494&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2003.1283512
DO - 10.1109/EDSSC.2003.1283512
M3 - Conference Proceeding
AN - SCOPUS:29044445494
T3 - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
SP - 193
EP - 196
BT - 2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Y2 - 16 December 2003 through 18 December 2003
ER -