Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits

Sang Lam; Mansun Chan

doi:10.1109/IRMMW-THz.2015.7327671

Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits

Sang Lam, Mansun Chan

Department of Electrical and Electronic Engineering

Hong Kong University of Science and Technology

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.

Original language	English
Title of host publication	IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479982721
DOIs	https://doi.org/10.1109/IRMMW-THz.2015.7327671
Publication status	Published - 11 Nov 2015
Event	40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 - Hong Kong, China Duration: 23 Aug 2015 → 28 Aug 2015

Publication series

Name	IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

Conference

Conference	40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Country/Territory	China
City	Hong Kong
Period	23/08/15 → 28/08/15

Access to Document

10.1109/IRMMW-THz.2015.7327671

Cite this

Lam, S., & Chan, M. (2015). Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits. In IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves Article 7327671 (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRMMW-THz.2015.7327671

Lam, Sang ; Chan, Mansun. / Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits. IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 2015. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

@inproceedings{4506660ea20a43cfb9c3c6fa949534ba,

title = "Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits",

abstract = "A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.",

author = "Sang Lam and Mansun Chan",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015 ; Conference date: 23-08-2015 Through 28-08-2015",

year = "2015",

month = nov,

day = "11",

doi = "10.1109/IRMMW-THz.2015.7327671",

language = "English",

series = "IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves",

}

Lam, S & Chan, M 2015, Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits. in IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves., 7327671, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, Institute of Electrical and Electronics Engineers Inc., 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015, Hong Kong, China, 23/08/15. https://doi.org/10.1109/IRMMW-THz.2015.7327671

Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits. / Lam, Sang; Chan, Mansun.
IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc., 2015. 7327671 (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits

AU - Lam, Sang

AU - Chan, Mansun

PY - 2015/11/11

Y1 - 2015/11/11

N2 - A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.

AB - A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.

UR - http://www.scopus.com/inward/record.url?scp=84969261883&partnerID=8YFLogxK

U2 - 10.1109/IRMMW-THz.2015.7327671

DO - 10.1109/IRMMW-THz.2015.7327671

M3 - Conference Proceeding

AN - SCOPUS:84969261883

T3 - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

BT - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015

Y2 - 23 August 2015 through 28 August 2015

ER -

Lam S, Chan M. Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits. In IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves. Institute of Electrical and Electronics Engineers Inc. 2015. 7327671. (IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves). doi: 10.1109/IRMMW-THz.2015.7327671

Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits

Abstract

Publication series

Conference

Access to Document

Other files and links

Cite this