TY - GEN
T1 - Compact transmission line design in a multi-metallization nano-CMOS process for millimeter-wave integrated circuits
AU - Lam, Sang
AU - Chan, Mansun
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/11/11
Y1 - 2015/11/11
N2 - A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.
AB - A compact transmission line design based on the conventional microwave stripline is presented for implementation of millimeter-wave CMOS integrated circuits. In a 65-nm process, the design gives a low insertion loss of 2.2 dB/mm at 60 GHz as determined by 3D electromagnetic (EM) simulations. A 50-Ω characteristic impedance is achieved resulting in a reflection coefficient of about -27 dB up to 80 GHz. The transmission line structure occupies minimal space of less than 17 μm in width and it accommodates active devices beneath it unaffected by any possible EM interference.
UR - http://www.scopus.com/inward/record.url?scp=84969261883&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2015.7327671
DO - 10.1109/IRMMW-THz.2015.7327671
M3 - Conference Proceeding
AN - SCOPUS:84969261883
T3 - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
BT - IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2015
Y2 - 23 August 2015 through 28 August 2015
ER -