TY - GEN
T1 - Co-implantation germanium with laser thermal annealing for the formation of np junction
AU - Rashid, Nur Nadhirah
AU - Aziz, Umar Abdul
AU - Aid, Siti Rahmah
AU - Centeno, Anthony
AU - Akira, Suwa
AU - Ikenoue, Hiroshi
AU - Xie, Fang
N1 - Publisher Copyright:
© 2017 JSAP.
PY - 2017/6/30
Y1 - 2017/6/30
N2 - Germanium (Ge) is a potential candidates to replace silicon (Si) due to its higher carrier mobility, which is the key point for realizing device high-drive-current. However, fabricating highly activated np junction in Ge is challenging due to the severe damages introduced from ion-implantation interact with dopant during subsequent annealing process, and results in dopant deactivation. Further optimization of fabrication process parameters is needed to overcome this problem. Co-implantation technique has gained attention due to its stress-induced carrier activation by implanting two atoms with different size. Combining with laser thermal annealing promise further improvement in activation and recrystallization. In this work, co-implantation of phosphorus (P) and tin (Sn) were performed, followed by KrF laser thermal annealing, to form an np junction in Ge. Laser fluence was varied to achieve np junction with higher activation and recrystallization. It is found that high degree of recrystallization was obtained in higher-fluence annealed sample, with 40% decrease of sheet resistance compare to those of lower-fluence annealed sample. Raman peak shift (≈ 3.5 cm-1) was also observed in the higher-fluence annealed sample, suggesting increase of localized strain in the sample.
AB - Germanium (Ge) is a potential candidates to replace silicon (Si) due to its higher carrier mobility, which is the key point for realizing device high-drive-current. However, fabricating highly activated np junction in Ge is challenging due to the severe damages introduced from ion-implantation interact with dopant during subsequent annealing process, and results in dopant deactivation. Further optimization of fabrication process parameters is needed to overcome this problem. Co-implantation technique has gained attention due to its stress-induced carrier activation by implanting two atoms with different size. Combining with laser thermal annealing promise further improvement in activation and recrystallization. In this work, co-implantation of phosphorus (P) and tin (Sn) were performed, followed by KrF laser thermal annealing, to form an np junction in Ge. Laser fluence was varied to achieve np junction with higher activation and recrystallization. It is found that high degree of recrystallization was obtained in higher-fluence annealed sample, with 40% decrease of sheet resistance compare to those of lower-fluence annealed sample. Raman peak shift (≈ 3.5 cm-1) was also observed in the higher-fluence annealed sample, suggesting increase of localized strain in the sample.
UR - http://www.scopus.com/inward/record.url?scp=85026744621&partnerID=8YFLogxK
U2 - 10.23919/IWJT.2017.7966525
DO - 10.23919/IWJT.2017.7966525
M3 - Conference Proceeding
AN - SCOPUS:85026744621
T3 - 17th International Workshop on Junction Technology, IWJT 2017
SP - 91
EP - 93
BT - 17th International Workshop on Junction Technology, IWJT 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th International Workshop on Junction Technology, IWJT 2017
Y2 - 1 June 2017 through 2 June 2017
ER -