Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

Miao Cui, Yutao Cai, Sang Lam, Wen Liu, Chun Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

6 Citations (Scopus)

Abstract

Both enhancement-and depletion-mode AlGaN/GaN metal-insulator-semiconductor HEMTs were fabricated with Al2O3 as the gate dielectric formed by atomic layer deposition (ALD). With the common problems of threshold voltage hysteresis in AlGaN/GaN MIS-HEMTs, DC I-V and fast transient I-V as well as frequency-dependent C-V measurements were performed to characterize the threshold voltage shifts Δ Vth and hence to systematically study the underlying mechanism. The experimental results reveal that Δ Vth can be as high as 1.0 V at V Gmax =5 V in transient I-V measurements despite the much lower values of 0.42 V in static and CV measurements. This has significant implications in using AlGaN/GaN MIS-HEMTs for high voltage switching applications. Besides, multi-frequency C-V measurements show that the primary Δ Vth is frequency independent but the second onset of voltage shifts (Δ V2) shows obvious frequency dependence.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538662342
DOIs
Publication statusPublished - 9 Oct 2018
Event2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 - Shenzhen, China
Duration: 6 Jun 20188 Jun 2018

Publication series

Name2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018

Conference

Conference2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018
Country/TerritoryChina
CityShenzhen
Period6/06/188/06/18

Keywords

  • AlGaN/GaN MIS-HEMT
  • AlO/III-N interface traps (fast and slow) and threshold voltage hysteresis.

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