TY - JOUR
T1 - Carbon Nanotube Optoelectronic Synapse Transistor Arrays with Ultra-Low Power Consumption for Stretchable Neuromorphic Vision Systems
AU - Xie, Tanghao
AU - Wang, Qinan
AU - Li, Min
AU - Fang, Yuxiao
AU - Li, Gang
AU - Shao, Shuangshuang
AU - Yu, Wenbo
AU - Wang, Suyun
AU - Gu, Weibing
AU - Zhao, Chun
AU - Tang, Minghua
AU - Zhao, Jianwen
N1 - Funding Information:
T.X. and Q.W. contributed equally to this work. This work was supported by the National Key Research and Development Program of China (2020YFA0714700),the Natural Science Foundation of China (62274174 and 92164108), and the Cooperation Project of Vacuum Interconnect Nano‐X Research Facility (NANO‐X) of Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences (F2208). The authors were grateful for the technical support for Nano‐X from Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences (SINANO).
Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/9/12
Y1 - 2023/9/12
N2 - High-performance stretchable optoelectronic synaptic transistor arrays are key units for constructing and mimicking simulated neuromorphic vision systems. In this study, ultra-low power consumption and low-operation-voltage stretchable all-carbon optoelectronic synaptic thin film transistors (TFTs) using sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) modified with CdSe/ZnS quantum dots as active layers on ionic liquid-based composite elastomer substrates are first reported. The resulting stretchable TFT devices show enhancement-mode characteristics with excellent electrical properties (such as the record on/off ratios up to 105, negligible hysteresis, and small subthreshold swing), excellent mechanical tensile properties (such as the only 12.4% and 6.4% degradations of the carrier mobility after 20% vertical and horizontal strain stretching), and optoelectronic synaptic plasticity (for the recognition of Morse codes) with ultra-low power consumptions (15.38 aJ) at the operating voltage from −1 to 0.2 V. At the same time, the designed nonvolatile conductance of the stretchable SWCNT optoelectronic synapse thin film transistors (SSOSTFTs) stimulated by UV light and the bending angle are first used to simulate stretchable neuromorphic vision systems (including the functions of the crystalline lens and optic cone cells as bionic eyes) for detecting the atmospheric environment with a record accuracy of 95.1% as a bionic eye.
AB - High-performance stretchable optoelectronic synaptic transistor arrays are key units for constructing and mimicking simulated neuromorphic vision systems. In this study, ultra-low power consumption and low-operation-voltage stretchable all-carbon optoelectronic synaptic thin film transistors (TFTs) using sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) modified with CdSe/ZnS quantum dots as active layers on ionic liquid-based composite elastomer substrates are first reported. The resulting stretchable TFT devices show enhancement-mode characteristics with excellent electrical properties (such as the record on/off ratios up to 105, negligible hysteresis, and small subthreshold swing), excellent mechanical tensile properties (such as the only 12.4% and 6.4% degradations of the carrier mobility after 20% vertical and horizontal strain stretching), and optoelectronic synaptic plasticity (for the recognition of Morse codes) with ultra-low power consumptions (15.38 aJ) at the operating voltage from −1 to 0.2 V. At the same time, the designed nonvolatile conductance of the stretchable SWCNT optoelectronic synapse thin film transistors (SSOSTFTs) stimulated by UV light and the bending angle are first used to simulate stretchable neuromorphic vision systems (including the functions of the crystalline lens and optic cone cells as bionic eyes) for detecting the atmospheric environment with a record accuracy of 95.1% as a bionic eye.
KW - bionic eyes
KW - carbon nanotubes
KW - neuromorphic computing
KW - optoelectronic synaptic thin film transistors
KW - stretchability
UR - http://www.scopus.com/inward/record.url?scp=85159891216&partnerID=8YFLogxK
U2 - 10.1002/adfm.202303970
DO - 10.1002/adfm.202303970
M3 - Article
AN - SCOPUS:85159891216
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 37
M1 - 2303970
ER -