Behavior of Raman modes in InPBi alloys under hydrostatic pressure

Changcheng Zheng; Xiaohu Wang; Jiqiang Ning; Kun Ding; Baoquan Sun; Shumin Wang; Shijie Xu

doi:10.1063/1.5085132

Behavior of Raman modes in InPBi alloys under hydrostatic pressure

Changcheng Zheng^*, Xiaohu Wang, Jiqiang Ning, Kun Ding, Baoquan Sun, Shumin Wang, Shijie Xu

^*Corresponding author for this work

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm^-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.

Original language	English
Article number	035120
Journal	AIP Advances
Volume	9
Issue number	3
DOIs	https://doi.org/10.1063/1.5085132
Publication status	Published - 1 Mar 2019

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Zheng, C., Wang, X., Ning, J., Ding, K., Sun, B., Wang, S., & Xu, S. (2019). Behavior of Raman modes in InPBi alloys under hydrostatic pressure. AIP Advances, 9(3), Article 035120. https://doi.org/10.1063/1.5085132

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title = "Behavior of Raman modes in InPBi alloys under hydrostatic pressure",

abstract = "Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.",

author = "Changcheng Zheng and Xiaohu Wang and Jiqiang Ning and Kun Ding and Baoquan Sun and Shumin Wang and Shijie Xu",

note = "Funding Information: CCZ acknowledges financial support from an open project from State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, and partial support from Natural Science Foundation of China (No.: 11504299). JQN acknowledges the financial support from Natural Science Foundation of China (11874390) and Hundred Talents Program of Chinese Academy of Sciences. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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T1 - Behavior of Raman modes in InPBi alloys under hydrostatic pressure

AU - Zheng, Changcheng

AU - Wang, Xiaohu

AU - Ning, Jiqiang

AU - Ding, Kun

AU - Sun, Baoquan

AU - Wang, Shumin

AU - Xu, Shijie

N1 - Funding Information: CCZ acknowledges financial support from an open project from State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, and partial support from Natural Science Foundation of China (No.: 11504299). JQN acknowledges the financial support from Natural Science Foundation of China (11874390) and Hundred Talents Program of Chinese Academy of Sciences. Publisher Copyright: © 2019 Author(s).

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.

AB - Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.

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U2 - 10.1063/1.5085132

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Behavior of Raman modes in InPBi alloys under hydrostatic pressure

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