Au-Free AlGaN/GaN MIS-HEMTs with Embedded Current Sensing Structure for Power Switching Applications

Ruize Sun, Yung C. Liang*, Yee Chia Yeo, Cezhou Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize converter circuit control function and overcurrent protection of device itself, we have designed, fabricated, and experimentallymeasured the Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure. A floating ohmic current sensing electrode is inserted between source and gate electrode of which the sensing voltage signal can represent the drain current. We have achieved stable current sensing ratios at various operating conditions including quasi-static, transient state, and under high temperature. The proposed structure is highly useful in monolithic power integrated circuit on CMOS-compatible AlGaN/GaN technologies.

Original languageEnglish
Article number7962222
Pages (from-to)3515-3518
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume64
Issue number8
DOIs
Publication statusPublished - Aug 2017

Keywords

  • AlGaN/GaN metal-insulator-semiconductor high electronmobility transistor (MIS-HEMT)
  • embedded current sensor
  • high-temperature operation
  • power converter control

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