Artificial synaptic behavior and its improvement of RRAM device with stacked solution-processed MXene layers

Zongjie Shen, Chun Zhao*, Yina Liu, Li Yang, Cezhou Zhao

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

6 Citations (Scopus)

Abstract

In this work, an RRAM device with the structure of Ag/MXene/MXene/Pt was fabricated, and stacked solution-processed MXene layers acted as the resistive switching (RS) layer. The device exhibited bipolar RS performance with the operation voltage lower than 2.5 V and the switching ratio around 103. The multi-level states of conductance indicated the bionic synaptic characteristics of this device. A performance like long-Term potentiation and depression (LTP/LTD) response suggested the great potential of this device in the neuromorphic system. In addition, based on the MNIST dataset, the pattern recognition system with key parameters from LTP/LTD showed the result with 85% recognition accuracy. After modulation on non-linearity of LTP and LTD curves, higher recognition accuracy was obtained, which was around 93%.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2021, ISOCC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-188
Number of pages2
ISBN (Electronic)9781665401746
DOIs
Publication statusPublished - 2021
Event18th International System-on-Chip Design Conference, ISOCC 2021 - Jeju Island, Korea, Republic of
Duration: 6 Oct 20219 Oct 2021

Publication series

NameProceedings - International SoC Design Conference 2021, ISOCC 2021

Conference

Conference18th International System-on-Chip Design Conference, ISOCC 2021
Country/TerritoryKorea, Republic of
CityJeju Island
Period6/10/219/10/21

Keywords

  • MXene
  • pattern recognition
  • solution-processed
  • synaptic behavior

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