Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications

Wangying Xu*, Tao Peng, Shuangmu Zhuo, Qiubao Lin, Weicheng Huang, Yujia Li, Fang Xu*, Chun Zhao, Deliang Zhu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam’s theory, among potential dopants, phosphorus (P) has a large dopant–oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.

Original languageEnglish
Article number12912
JournalInternational Journal of Molecular Sciences
Volume23
Issue number21
DOIs
Publication statusPublished - Nov 2022

Keywords

  • crystalline oxide semiconductors
  • phosphorus doped indium oxide
  • solution-grown
  • thin-film transistors

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