Application of selective Si:C epitaxy for recessed source/drain Technology

Yihwan Kim; Zhiyuan Ye; Ali Zojaji; Andrew Lam; Errol Sanchez; Satheesh Kuppurao

doi:10.1149/1.2355844

Application of selective Si:C epitaxy for recessed source/drain Technology

Yihwan Kim^*, Zhiyuan Ye, Ali Zojaji, Andrew Lam, Errol Sanchez, Satheesh Kuppurao

^*Corresponding author for this work

Applied Materials Incorporated

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

4 Citations (Scopus)

Abstract

We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile. copyright The Electrochemical Society.

Original language	English
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	467-471
Number of pages	5
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355844
Publication status	Published - 2006
Externally published	Yes
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	29/10/06 → 3/11/06

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10.1149/1.2355844

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title = "Application of selective Si:C epitaxy for recessed source/drain Technology",

abstract = "We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile. copyright The Electrochemical Society.",

author = "Yihwan Kim and Zhiyuan Ye and Ali Zojaji and Andrew Lam and Errol Sanchez and Satheesh Kuppurao",

year = "2006",

doi = "10.1149/1.2355844",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "7",

pages = "467--471",

booktitle = "SiGe and Ge",

edition = "7",

note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

Kim, Y, Ye, Z, Zojaji, A, Lam, A, Sanchez, E & Kuppurao, S 2006, Application of selective Si:C epitaxy for recessed source/drain Technology. in SiGe and Ge: Materials, Processing, and Devices. 7 edn, ECS Transactions, no. 7, vol. 3, Electrochemical Society Inc., pp. 467-471, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 29/10/06. https://doi.org/10.1149/1.2355844

TY - GEN

T1 - Application of selective Si:C epitaxy for recessed source/drain Technology

AU - Kim, Yihwan

AU - Ye, Zhiyuan

AU - Zojaji, Ali

AU - Lam, Andrew

AU - Sanchez, Errol

AU - Kuppurao, Satheesh

PY - 2006

Y1 - 2006

N2 - We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile. copyright The Electrochemical Society.

AB - We have developed selective Si:C epitaxy process with 1 % substitutional carbon concentration to fill 60 nm deep recessed areas with 100 % selectivity. The process does not show loading effects of thickness and substitutional carbon concentration on patterned wafer. Different growth behavior on sidewall of the recessed area is observed compared to that on the recessed bottom, that causes a non-flat film surface profile. copyright The Electrochemical Society.

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U2 - 10.1149/1.2355844

DO - 10.1149/1.2355844

M3 - Conference Proceeding

AN - SCOPUS:33846949743

T3 - ECS Transactions

SP - 467

EP - 471

BT - SiGe and Ge

PB - Electrochemical Society Inc.

T2 - SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Application of selective Si:C epitaxy for recessed source/drain Technology

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