@inproceedings{b41c77cd03124ab285fdb14e0daf70dc,
title = "AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers",
abstract = "This study proposed a 100 kHz, 5V/11V boost converter with an integrated gate driver for a power switching device using recessed E-mode MIS-HFETs. The integrated gate driver consisting of multi-stages DCFL (Direct-Coupled FET Logic) inverters and a buffer stage, has large input swing (up to 10 V) and wide noise margin with gate dielectric, which benefits applications requiring large gate swing without any additional drivers or level shifters. The impact of transistor size on rise times and fall times have been studied. Either buffer stage or larger width of DCFL inverter can reduce rise times from 2.4 μs to less than 0.5 μs at 100 kHz, so the output voltage of boost converter is increased by 10 % at a duty cycle of 0.7. However, large buffer width can result in high gate overshoot and oscillation, indicating careful design to balance switching speed and oscillation.",
keywords = "AlGaN/GaN MIS-HFETs, DC-DC converters, Integrated gate driver",
author = "Miao Cui and Qinglei Bu and Yutao Cai and Ruize Sun and Wen Liu and Huiqing Wen and Sang Lam and Liang, {Yung C.} and Mitrovic, {Ivona Z.} and Stephen Taylor and Chalker, {Paul R.} and Cezhou Zhao",
note = "Funding Information: III. CONCLUSIONS An Integrated gate driver with an E-mode MIS-HFET based power device is proposed and investigated in GaN based DC-DC boost converters. The proposed gates driver with DCFL inverters and a buffer amplifier has large gate swing without any additional drivers or level shifters. The impact of inverter size and buffer stage width on driving capability are studied. A large D-mode width of the DCFL inverter or a buffer amplifier can improve reduce rise times or switching-on times. However, a large buffer width can result in high gate overshoot and oscillation, indicating careful gate driver design should be made to balance switching speed and oscillation. Acknowledgment This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (18KJB470023)㸪Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12), and the XJTLU Research Development Fund (PGRS-13-03-01 and RDF-14-02-02). Funding Information: This work was supported by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (18KJB470023) Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Technology (RR0140), the Key Program Special Fund in XJTLU (KSF-A-05) (KSF-A-12), and the XJTLU Research Development Fund (PGRS-13-03-01 and RDF-14-02-02). Publisher Copyright: {\textcopyright} 2019 The Korean Institute of Power Electronics (KIPE).; 10th International Conference on Power Electronics - ECCE Asia, ICPE 2019 - ECCE Asia ; Conference date: 27-05-2019 Through 30-05-2019",
year = "2019",
month = may,
language = "English",
series = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia",
}